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Abstract
This erratum corrects the value of the wetting layer thickness provided in our Article [Opt. Express 29, 34024 (2021) [CrossRef] ]. This misprint does not influence the results and conclusions presented in the original Article.
© 2021 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
In the description of the theoretical simulations in our article [1] on page 34026 (section 3, third paragraph, second sentence), the provided value of the used wetting layer thickness (9 nm) was incorrect. The sentence should read as “We assumed 75% As concentration within a lens-shaped 15-nm-high QD settled on a 0.9-nm-thick wetting layer”. The simulations in the original Article were performed using the correct value and this correction has no impact on the presented results and the conclusions of the original Article.
References
1. P. Podemski, M. Gawełczyk, P. Wyborski, H. Salamon, M. Burakowski, A. Musiał, J. P. Reithmaier, M. Benyoucef, and G. Sęk, “Spin memory effect in charged single telecom quantum dots,” Opt. Express 29, 34024–34034 (2021). [CrossRef]