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Anomalous polarization-sensitive Fabry-Perot resonance in a one-dimensional photonic crystal containing an all-dielectric metamaterial defect

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Abstract

Owing to polarization-independent property of propagating phases inside isotropic dielectric layers, Fabry-Perot resonances in metal-dielectric-metal sandwich structures and one-dimensional (1-D) photonic crystals (PhCs) with isotropic dielectric defects are polarization-insensitive. Herein, we introduce an all-dielectric elliptical metamaterial (EMM) defect into a 1-D PhC to realize an anomalous polarization-sensitive Fabry-Perot resonance empowered by the polarization-sensitive property of the propagating phase inside the all-dielectric EMM layer. The wavelength difference of the Fabry-Perot resonance between transverse magnetic and transverse electric polarizations is larger than 100 nm at the incident angle of 45 degrees. Enabled by the polarization-sensitive property of the Fabry-Perot resonance, high-performance polarization selectivity can be achieved in a broad angle range. Our work offers a viable recipe, well within the reach of current fabrication technique, to explore polarization-dependent physical phenomena and devices.

© 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Corrections

Feng Wu, Yuchun She, Zhaoming Cheng, Shi Hu, Guanghui Liu, and Shuyuan Xiao, "Anomalous polarization-sensitive Fabry-Perot resonance in a one-dimensional photonic crystal containing an all-dielectric metamaterial defect: erratum," Opt. Express 31, 43519-43520 (2023)
https://opg.optica.org/oe/abstract.cfm?uri=oe-31-26-43519

1. Introduction

Optical resonances play a vital role in optical physics due to their unique capability to trap light in small volumes [14]. As a class of optical resonances, Fabry-Perot resonances have been extensively exploited to design interferometers [5,6], filters [710], lasers [11,12], absorbers [1315], sensors [1620], antennas [21,22], optical switches [2326], and Zitterbewegung oscillations [27]. When the round-trip phase inside a cavity equals to multiple times of 2π, Fabry-Perot resonance occurs. It is well-known that metal-dielectric-metal sandwich structures can support Fabry-Perot resonances [2837]. At near-infrared wavelengths, the reflection phase of noble metal layer is close to –π, which is polarization-insensitive. Also, the propagating phase inside isotropic dielectric layer is polarization-independent. Consequently, the Fabry-Perot resonances in metal-dielectric-metal sandwich structures are polarization-insensitive [28,29,32]. Another common approach to realize Fabry-Perot resonances is to introduce isotropic dielectric defects into one-dimensional (1-D) photonic crystals (PhCs) [3841]. 1-D PhCs can be treated as optical mirrors when the wavelength of incident light lies inside the photonic bandgaps (PBGs) [4248]. According to the multiple scattering mechanism, the PBGs in 1-D PhCs shift toward shorter wavelengths as the incident angle increases under both transverse magnetic (TM) and transverse electric (TE) polarizations [42,49,50]. In other words, the PBGs in 1-D PhCs exhibit polarization-insensitive property. The reflection phases of 1-D PhCs inherit polarization-insensitive property. As a result, the Fabry-Perot resonances in 1-D PhCs containing isotropic dielectric defects are also polarization-insensitive [27,5154].

In recent years, all-dielectric metamaterials have received rich attention in nanophotonics [5565]. They have been widely utilized to achieve perfect absorption [6670] and perfect reflection [58,71]. As a class of all-dielectric metamaterials, all-dielectric elliptical metamaterials (EMMs) demonstrate their intriguing ability to achieve light confinement [72], negative refraction [73], and angle-insensitive topological interface states [74]. The iso-frequency curves (IFCs) of all-dielectric EMMs under TM polarization are ellipse. In contrast, the IFCs of all-dielectric EMMs under TE polarization are circles. Consequently, the propagating phases inside all-dielectric EMMs become polarization-sensitive. This polarization-sensitive property of the propagating phases inside all-dielectric EMMs provides us a possibility to achieve polarization-sensitive Fabry-Perot resonances. In this paper, we introduce an all-dielectric EMM defect into a 1-D PhC to achieve an anomalous polarization-sensitive Fabry-Perot resonance. The all-dielectric EMM defect layer is realized by an all-dielectric subwavelength multilayer. When the incident angle is 45 degrees, the wavelength difference of the 2nd Fabry-Perot resonance between TM and TE polarizations reaches 102.26 nm. Enabled by the polarization-sensitive property of the 2nd Fabry-Perot resonance, we achieve high-performance polarization selectivity. Specifically, the optimized polarization extinction ratio (PER) reaches 1.92 × 104. Besides, the optimized PER keeps higher than 103 in a broad angle range from 30 to 60 degrees. The designed 1-D PhC is composed of silicon (Si) and magnesium fluoride (MgF2) layers, which can be easily fabricated by electron-beam vacuum deposition [75] or magnetron sputtering technique [76]. Our work offers a viable recipe to achieve polarization-sensitive Fabry-Perot resonances and explore polarization-dependent physical phenomena. It is known that the IFCs of hyperbolic metamaterials (HMMs) are also polarization-dependent [77]. The IFCs of HMMs under TM polarization are hyperbola while those under TE polarization are circles [77]. Therefore, polarization-sensitive Fabry-Perot resonances can also be achieved in 1-D PhCs containing HMM defects [78]. Nevertheless, owing to the inevitable optical absorption in HMMs, the transmittance and PER are intensively limited [78]. Compared with HMMs, all-dielectric EMMs utilized in this work are lossless. Consequently, the transmittance and PER can be greatly improved.

This paper is organized as follows. In Sec. 2, we give the physical mechanism of anomalous polarization-sensitive Fabry-Perot resonances in 1-D PhCs with all-dielectric EMM defects. In Sec. 3, we discuss the realization of polarization-sensitive Fabry-Perot resonances. In Sec. 4, we achieve high-performance polarization selectivity enabled by the polarization-sensitive Fabry-Perot resonances. Finally, the conclusions are given in Sec. 5.

2. Physical mechanism of anomalous polarization-sensitive Fabry-Perot resonance

In this section, we demonstrate the physical mechanism of anomalous polarization-sensitive Fabry-Perot resonances in 1-D PhCs containing all-dielectric EMM defects. First, we recall the polarization-insensitive property of conventional Fabry-Perot resonances in 1-D PhCs containing isotropic dielectric defects. Figure 1(a) shows the schematic of a 1-D PhC containing an isotropic dielectric defect, which can be denoted by (AB)NC(AB)N. The well-known Fabry-Perot resonance condition takes the following form

$${\varphi _{\textrm{PhC}1}} + 2{\varphi _\textrm{C}} + {\varphi _{\textrm{PhC}2}} = 2m\pi \; ({m = 0,\; 1,\; 2 \ldots } ), $$
where ${\varphi _{\textrm{PhC}1}}$ (${\varphi _{\textrm{PhC}2}}$) represents the reflection phase of the left (right) 1-D PhC, ${\varphi _\textrm{C}}$ represents the propagating phase inside the isotropic dielectric defect layer, and m represents the order of the Fabry-Perot resonance. According to the multiple scattering mechanism, the PBGs in 1-D PhCs shift toward shorter wavelengths as the incident angle increases under both TM and TE polarizations [42,49,50]. In other words, the PBGs in 1-D PhCs exhibit polarization-insensitive property. Consequently, the reflection phases of 1-D PhCs, i.e., ${\varphi _{\textrm{PhC}1}}$ and ${\varphi _{\textrm{PhC}2}}$, inherit polarization-insensitive property.

 figure: Fig. 1.

Fig. 1. (a) Schematic of a 1-D PhC containing an isotropic dielectric defect (C layer). (b) Schematics of the IFCs of isotropic dielectric C under TM and TE polarizations. (c) Schematic of a 1-D PhC containing an all-dielectric EMM defect (D layer). The EMM defect layer is realized by an all-dielectric subwavelength multilayer (EF)S. (d) Schematics of the IFCs of EMM D under TM and TE polarizations.

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The equation of the IFC of isotropic dielectric C under TM (TE) polarization can be expressed as [79]

$$\frac{{{{({{k_x}} )}^2}}}{{{\varepsilon _\textrm{C}}}} + \frac{{{{[{k_{\textrm{C}z}^{\textrm{TM}({\textrm{TE}} )}} ]}^2}}}{{{\varepsilon _\textrm{C}}}} = {({{k_0}} )^2}, $$
where ${k_x} = {k_0}\textrm{sin}\theta = 2\pi \textrm{sin}\theta /\lambda $ denotes the x component (tangential component) of the wavevector, $k_{\textrm{C}z}^{\textrm{TM}({\textrm{TE}} )}$ denotes the z component (normal component) of the wavevector in isotropic dielectric C under TM (TE) polarization, ${\varepsilon _\textrm{C}}$ denotes the relative permittivity of isotropic dielectric C, and $\lambda $ denotes the wavelength of light in free space. According to Eq. (2), the IFCs of isotropic dielectric C under both TM and TE polarizations are both circles, as schematically shown in Fig. 1(b). Therefore, the propagating phase inside the isotropic dielectric defect layer $\varphi _\textrm{C}^{\textrm{TM}({\textrm{TE}} )}$ is polarization-independent, i.e.,
$$\varphi _\textrm{C}^{\textrm{TM}({\textrm{TE}} )} = k_{\textrm{C}z}^{\textrm{TM}({\textrm{TE}} )}{d_\textrm{C}} = \frac{{2\pi }}{\lambda }{d_\textrm{C}}\sqrt {{\varepsilon _\textrm{C}} - \textrm{si}{\textrm{n}^2}\theta } , $$
where ${d_\textrm{C}}$ denotes the thickness of C layer and $\theta $ denotes the incident angle of light. Since the reflection phases of 1-D PhCs are polarization-insensitive and the propagating phase inside the isotropic dielectric defect layer is polarization-independent, the conventional Fabry-Perot resonance in a 1-D PhC containing an isotropic dielectric defect is polarization-insensitive.

Figure 1(c) shows the schematic of a 1-D PhC containing an all-dielectric EMM defect, which can be denoted by (AB)ND(AB)N. The well-known Fabry-Perot resonance condition takes the following form

$${\varphi _{\textrm{PhC}1}} + 2{\varphi _\textrm{D}} + {\varphi _{\textrm{PhC}2}} = 2m\pi \; ({m = 0,\; 1,\; 2 \ldots } ), $$
where ${\varphi _\textrm{D}}$ represents the propagating phase inside the all-dielectric EMM defect layer, and m represents the order of the Fabry-Perot resonance. The EMM defect layer is further realized by an all-dielectric subwavelength multilayer (EF)S. According to the effective medium approximation (EMA), the effective relative permittivity tensor of the all-dielectric subwavelength multilayer (EF)S takes the following forms [80]
$$\overline{\overline {{\varepsilon _\textrm{D}}}} = \left[ {\begin{array}{{ccc}} {{\varepsilon_{\textrm{D}x}}}&0&0\\ 0&{{\varepsilon_{\textrm{D}x}}}&0\\ 0&0&{{\varepsilon_{\textrm{D}z}}} \end{array}} \right], $$
where
$${\varepsilon _{\textrm{D}x}} = p{\varepsilon _\textrm{E}} + ({1 - p} ){\varepsilon _\textrm{F}}, $$
$$\frac{1}{{{\varepsilon _{\textrm{D}z}}}} = \frac{p}{{{\varepsilon _\textrm{E}}}} + \frac{{1 - p}}{{{\varepsilon _\textrm{F}}}}. $$

Here, ${\varepsilon _\textrm{E}}$ (${\varepsilon _\textrm{F}}$) denotes the relative permittivity of isotropic dielectric E (F), $p = {d_\textrm{E}}/({{d_\textrm{E}} + {d_\textrm{F}}} )$ denotes the duty cycle of isotropic dielectric E, and ${d_\textrm{E}}$ (${d_\textrm{F}}$) denotes the thickness of E (F) layer. Note that Eqs. (5)–(7) are only applicable when the subwavelength condition is satisfied, i.e., ${d_{\textrm{Unit}}} = {d_\textrm{E}} + {d_\textrm{F}} \ll \lambda $ [81].

Substituting Eq. (5) into the Maxwell’s equations, one can derive the equations of the IFCs of the all-dielectric subwavelength multilayer (EF)S under TM and TE polarizations [79]

$$\frac{{{{({{k_x}} )}^2}}}{{{\varepsilon _{\textrm{D}z}}}} + \frac{{{{({k_{\textrm{D}z}^{\textrm{TM}}} )}^2}}}{{{\varepsilon _{\textrm{D}x}}}} = {({{k_0}} )^2}, $$
$$\frac{{{{({{k_x}} )}^2}}}{{{\varepsilon _\textrm{D}}}} + \frac{{{{({k_{\textrm{D}z}^{\textrm{TE}}} )}^2}}}{{{\varepsilon _\textrm{D}}}} = {({{k_0}} )^2}, $$
where $k_{\textrm{D}z}^{\textrm{TM}({\textrm{TE}} )}$ denotes the z component (normal component) of the wavevector in EMM D under TM (TE) polarization. According to Eqs. (8) and (9), the IFCs of EMM D under TM and TE polarizations are an ellipse and a circle, respectively, as schematically shown in Fig. 1(d). Therefore, the propagating phase inside the EMM defect layer becomes polarization-sensitive, i.e.,
$$\varphi _\textrm{D}^{\textrm{TM}} = k_{\textrm{D}z}^{\textrm{TM}}{d_\textrm{D}} = \frac{{2\pi }}{\lambda }{d_\textrm{D}}\sqrt {{\varepsilon _{\textrm{D}x}} - \frac{{{\varepsilon _{\textrm{D}x}}}}{{{\varepsilon _{\textrm{D}z}}}}\textrm{si}{\textrm{n}^2}\theta } , $$
$$\varphi _\textrm{D}^{\textrm{TE}} = k_{\textrm{D}z}^{\textrm{TE}}{d_\textrm{D}} = \frac{{2\pi }}{\lambda }{d_\textrm{D}}\sqrt {{\varepsilon _{\textrm{D}x}} - \textrm{si}{\textrm{n}^2}\theta }, $$
where ${d_\textrm{D}}$ denotes the thickness of D layer. Since the propagating phase inside the EMM defect layer is polarization-sensitive, the Fabry-Perot resonance in a 1-D PhC containing an all-dielectric EMM defect is polarization-sensitive.

When $\theta \ne 0^\circ $, we have $\varphi _\textrm{D}^{\textrm{TM}} \ne \varphi _\textrm{D}^{\textrm{TE}}$. The propagating phase difference inside the EMM defect layer between TM and TE polarizations can be calculated as

$$\Delta {\varphi _\textrm{D}} = |{\varphi_\textrm{D}^{\textrm{TM}} - \varphi_\textrm{D}^{\textrm{TE}}} |= \frac{{2\pi }}{\lambda }{d_\textrm{D}}\left|{\sqrt {{\varepsilon_{\textrm{D}x}} - \frac{{{\varepsilon_{\textrm{D}x}}}}{{{\varepsilon_{\textrm{D}z}}}}\textrm{si}{\textrm{n}^2}\theta } - \sqrt {{\varepsilon_{\textrm{D}x}} - \textrm{si}{\textrm{n}^2}\theta } } \right|. $$

For a fixed incident angle, the Fabry-Perot resonance becomes more polarization-sensitive as the propagating phase difference inside the EMM defect layer between TM and TE polarizations $\Delta {\varphi _\textrm{D}}$ increases. Combing Eqs. (6), (7) and (12), the polarization-sensitive property of the Fabry-Perot resonance can be flexibly tuned by the duty cycle of isotropic dielectric E p.

3. Realization of anomalous polarization-sensitive Fabry-Perot resonance

In this section, we realize an anomalous polarization-sensitive Fabry-Perot resonance in a 1-D PhC containing an all-dielectric EMM defect based on the theoretical model in Sec. 2. The EMM defect layer is realized by a Si/MgF2 subwavelength multilayer (EF)S. The relative permittivities of Si and MgF2 are ${\varepsilon _\textrm{E}} = n_\textrm{E}^2 = {3.48^2}$ and ${\varepsilon _\textrm{F}} = n_\textrm{F}^2 = {1.37^2}$, respectively [82]. We define a scale factor as

$$F({p,\theta } )= \left|{\sqrt {[{p{\varepsilon_\textrm{E}} + ({1 - p} ){\varepsilon_\textrm{F}}} ]\left[ {1 - \left( {\frac{p}{{{\varepsilon_\textrm{E}}}} + \frac{{1 - p}}{{{\varepsilon_\textrm{F}}}}} \right)\textrm{si}{\textrm{n}^2}\theta } \right]} - \sqrt {p{\varepsilon_\textrm{E}} + ({1 - p} ){\varepsilon_\textrm{F}} - \textrm{si}{\textrm{n}^2}\theta } } \right|.$$

Clearly, F is a binary function with respect to p and $\theta $. Then, propagating phase difference inside the EMM defect layer between TM and TE polarizations can be expressed as a binary function with respect to p and $\theta $, i.e.,

$$\Delta {\varphi _\textrm{D}}({p,\theta } )= \frac{{2\pi }}{\lambda }{d_\textrm{D}}F({p,\theta } ). $$

As we discussed in Sec. 2, a larger $\Delta {\varphi _\textrm{D}}$ gives rise to a more polarization-sensitive Fabry-Perot resonance. Figure 2 gives the dependence of the scale factor F on the duty cycle p for a fixed incident angle $\theta = 45^\circ $. As the duty cycle increases from 0 to 0.383, the scale factor increases from 0 to 0.122. As the duty cycle continues to increase to 1, the scale factor gradually decreases from to 0. When $p = 0.383$, the scale factor reaches its maximum ${F_{\textrm{max}}} = 0.122$. According to Eqs. (6) and (7), we have ${\varepsilon _{\textrm{D}x}} = 5.7963$ and ${\varepsilon _{\textrm{D}z}} = 2.7750$.

 figure: Fig. 2.

Fig. 2. Dependence of the scale factor F on the duty cycle p.

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For the 1-D PhC (AB)N, isotropic dielectrics A and B are chosen to be Si and MgF2, respectively. The thicknesses of A and B layers are selected to be ${d_\textrm{A}} = {d_\textrm{B}} = 134\; \textrm{nm}$. The Bragg wavelength of the 1st order PBG at normal incidence can be calculated as ${\lambda _{\textrm{Brg}}} = 2({{n_\textrm{A}}{d_\textrm{A}} + {n_\textrm{B}}{d_\textrm{B}}} )= 1299.80\; \textrm{nm}$. It is known that as the number of periods $\textrm{N}$ increases, the PBG becomes deeper, giving rise to a larger maximum PER but a narrower operating bandwidth of polarization selectivity. Simultaneously considering the PER and operating bandwidth of polarization selectivity, we set the number of periods to be $\textrm{N} = 4$. For the EMM defect layer (EF)S, the thickness is selected to be ${d_\textrm{D}} = 640\; \textrm{nm}$. The number of periods is selected to be $\textrm{S} = 20$. Then, the thicknesses of E and F layers can be calculated as ${d_\textrm{E}} = p{d_\textrm{D}}/\textrm{S} = 12.26\; \textrm{nm}$ and ${d_\textrm{F}} = ({1 - p} ){d_\textrm{D}}/\textrm{S} = 19.74\; \textrm{nm}$, respectively. The thickness of the unit cell inside the EMM defect layer is only ${d_{\textrm{Unit}}} = {d_\textrm{E}} + {d_\textrm{F}} = 32\; \textrm{nm}$ (0.025 times of the Bragg wavelength), which ensures the validation of the EMA (details can be seen in Appendix A). In this work, we focus on the 2nd order Fabry-Perot resonance, i.e., $m = 2$. For any incident angle $\theta $, we can obtain the refractive angle inside the EMM defect layer ${\theta _\textrm{D}}$ according to the Snall’s law ${n_0}\textrm{sin}\theta = {n_{\textrm{D}x}}\textrm{sin}{\theta _\textrm{D}}$. Then, we calculate the reflection phases of the left and right 1-D PhCs according to the transfer matrix method (TMM) [83]. Next, we calculate the propagating phase inside the EMM defect layer according to Eqs. (10) and (11). Finally, we obtain the theoretically predicted wavelength of the 2nd Fabry-Perot resonance according to the Fabry-Perot condition with $m = 2$ [i.e., Eq. (4)]. Figure 3(a) gives the dependence of the theoretically predicted wavelength of the 2nd Fabry-Perot resonance on the incident angle under TM and TE polarizations. As demonstrated, the 2nd Fabry-Perot resonance exhibits polarization-sensitive property. As the incident angle increases from $0^\circ $ to $60^\circ $, the 2nd Fabry-Perot resonance under TM polarization shifts from 1682.32 to 1430.01 nm while that under TE polarization shifts from 1682.32 to 1588.99 nm. Figure 3(b) further gives the dependence of the theoretically predicted wavelength difference of the 2nd Fabry-Perot resonance between TM and TE polarizations on the incident angle. As the incident angle increases from $0^\circ $ to $60^\circ $, the theoretically predicted wavelength difference rapidly increases from 0 to 158.98 nm.

 figure: Fig. 3.

Fig. 3. (a) Dependence of the theoretically predicted wavelength of the 2nd Fabry-Perot resonance on the incident angle under TM and TE polarizations. (b) Dependence of the theoretically predicted wavelength difference of the 2nd Fabry-Perot resonance between TM and TE polarizations on the incident angle.

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To confirm the accuracy of the theoretical model, we numerically calculate the transmittance spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 as a function of the incident angle under TM and TE polarizations according to the TMM [83], as shown in Fig. 4(a). As demonstrated, two Fabry-Perot resonances (1st and 2nd Fabry-Perot resonances) occur inside the PBG. As the incident angle increases from $0^\circ $ to $60^\circ $, the 2nd Fabry-Perot resonance under TM polarization shifts from 1678.02 to 1426.59 nm while that under TE polarization shifts from 1678.02 to 1583.26 nm. The numerical results are in good agreement with the theoretical model. Figure 4(b) further gives the dependence of the numerically calculated wavelength difference of the 2nd Fabry-Perot resonance between TM and TE polarizations on the incident angle. As the incident angle increases from $0^\circ $ to $60^\circ $, the numerically calculated wavelength difference rapidly increases from 0 to 156.67 nm. Compared with conventional Fabry-Perot resonances in 1-D PhCs containing isotropic dielectric defects, the designed Fabry-Perot resonance demonstrates a superior polarization-sensitive property (details can be seen in Appendix B). Also, we numerically calculate the dependence of the Q factor of the 2nd Fabry-Perot resonance on the incident angle under TM and TE polarizations, as shown in Fig. 4(c). As the incident angle increases from $0^\circ $ to $60^\circ $, the numerically calculated Q factor decreases from 2.90 × 102 to 7.58 × 101 under TM polarization while that increases from 2.90 × 102 to 8.54 × 102 under TE polarization.

 figure: Fig. 4.

Fig. 4. (a) Numerically calculated transmittance spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 as a function of the incident angle under TM and TE polarizations. (b) Numerically calculated wavelength difference of the 2nd Fabry-Perot resonance between TM and TE polarizations on the incident angle. (c) Dependence of the numerically calculated Q factor of the 2nd Fabry-Perot resonance on the incident angle under TM and TE polarizations.

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To more intuitively compare the numerical results with the theoretical model, we give the dependence of the theoretically predicted and numerically calculated wavelengths of the 2nd Fabry-Perot resonance on the incident angle under TM and TE polarizations, as shown in Fig. 5(a). Clearly, the numerical results agree well with the theoretical model. The errors between the theoretically predicted and numerically calculated wavelengths of the 2nd Fabry-Perot resonances are smaller than 5.8 nm (0.37%), indicating that the theoretical model is accurate. The errors originate from the EMA. In addition, we give the dependence of the theoretically predicted and numerically calculated wavelength differences of the 2nd Fabry-Perot resonance between TM and TE polarizations on the incident angle, as shown in Fig. 5(b). The errors between the theoretically predicted and numerically calculated wavelength differences of the 2nd Fabry-Perot resonance between TM and TE polarizations are smaller than 2.3 nm.

 figure: Fig. 5.

Fig. 5. (a) Dependence of the theoretically predicted and numerically calculated wavelengths of the 2nd Fabry-Perot resonance on the incident angle under TM and TE polarizations. (b) Dependence of the theoretically predicted and numerically calculated wavelength differences of the 2nd Fabry-Perot resonance between TM and TE polarizations on the incident angle.

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4. High-performance polarization selectivity enabled by anomalous polarization-sensitive Fabry-Perot resonance

In this section, we achieve high-performance polarization selectivity enabled by the anomalous polarization-sensitive Fabry-Perot resonance. The incident angle is initially set to be $\theta = 45^\circ $. Figure 6(a) gives the transmittance spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 under TM and TE polarizations at $\theta = 45^\circ $ according to the TMM [83]. Under TM polarization, a transmittance peak occurs at the wavelength 1518.78 nm owing to the 2nd Fabry-Perot resonance. For TE polarization, a transmittance peak occurs at the wavelength 1621.04 nm owing to the 2nd Fabry-Perot resonance. The wavelength difference between two transmittance peaks reaches 102.26 nm, giving rise to high-performance polarization selectivity. In addition, the Q factors of the 2nd Fabry-Perot resonances under TM and TE polarizations are 1.37 × 102 and 5.25 × 102, respectively. The PER is defined as the transmittance ratio between TM and TE polarizations, i.e., ${T^{\textrm{TM}}}/{T^{\textrm{TE}}}$. Figure 6(b) gives the PER spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 at $\theta = 45^\circ $. Enabled by the polarization-sensitive property of the 2nd Fabry-Perot resonance, high-performance polarization selectivity is achieved. At the wavelength 1518.33 nm, the PER reaches its maximum 1.92 × 104. It should be noted that high-performance polarization selectivity can still be achieved if exchanging the positions of Si and MgF2 layers (E and F layers) within the all-dielectric EMM defect (details can be seen in Appendix C).

 figure: Fig. 6.

Fig. 6. (a) Numerically calculated transmittance spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 under TM and TE polarizations at $\theta = 45^\circ $. (b) PER spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 at $\theta = 45^\circ $.

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Then, the incident angle is changed to be $\theta = 60^\circ $. Figure 7(a) gives the transmittance spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 under TM and TE polarizations at $\theta = 60^\circ $ according to the TMM [83]. Under TM polarization, a transmittance peak occurs at the wavelength 1430.01 nm owing to the 2nd Fabry-Perot resonance. For TE polarization, a transmittance peak occurs at the wavelength 1588.99 nm owing to the 2nd Fabry-Perot resonance. The wavelength difference between two transmittance peaks reaches 158.98 nm, giving rise to high-performance polarization selectivity. In addition, the Q factors of the 2nd Fabry-Perot resonances under TM and TE polarizations are 7.58 × 101 and 8.54 × 102, respectively. Figure 7(b) gives the PER spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 at $\theta = 60^\circ $. Enabled by the polarization-sensitive property of the 2nd Fabry-Perot resonance, high-performance polarization selectivity is achieved. At the wavelength 1429.28 nm, the PER reaches its maximum 2.06 × 105.

 figure: Fig. 7.

Fig. 7. (a) Numerically calculated transmittance spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 under TM and TE polarizations at $\theta = 60^\circ $. (b) PER spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 at $\theta = 60^\circ $.

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From Fig. 4(b), one can see that the wavelength difference of the 2nd Fabry-Perot resonance between TM and TE polarizations remains at a high level in a broad angle range. Consequently, high-performance polarization selectivity can be achieved in a broad angle range. Figure 8 gives the optimized PER of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 at different incident angles. As the incident angle increases from $20^\circ $ to $60^\circ $, the optimized PER dramatically increases from 1.21 × 102 to 2.06 × 105. The optimized PER keeps higher than 103 in a broad angle range from $30^\circ $ to $60^\circ $.

 figure: Fig. 8.

Fig. 8. Optimized PER of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 at different incident angles. The black dashed line represents PER = 103.

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5. Conclusion

In summary, we realize an anomalous polarization-sensitive Fabry-Perot resonance in a 1-D PhC containing all-dielectric EMM defect. Owing to the polarization-sensitive property of the propagating phase inside the all-dielectric EMM layer, the wavelength difference of the Fabry-Perot resonance between TM and TE polarizations is larger than 100 nm when the incident angle is 45 degrees. Enabled by the polarization-sensitive property of the Fabry-Perot resonance, high-performance polarization selectivity with an optimized PER on the order of 104 can be achieved. Our work offers a viable recipe, well within the reach of current fabrication technique, to explore polarization-dependent physical phenomena and devices.

Appendix A: validation of EMA

In this appendix, we give a comparison of the transmittance spectrum of the Si/MgF2 subwavelength multilayer (EF)20 and the homogeneous layer with the effective relative permittivity tensor calculated by the EMA under TM and TE polarizations at $\theta = 45^\circ $, as shown in Figs. 9(a) and 9(b). The thicknesses of Si and MgF2 layers can ${d_\textrm{E}} = 12.26\; \textrm{nm}$ and ${d_\textrm{F}} = 19.74\; \textrm{nm}$, respectively. As demonstrated, the transmittance spectrum of the Si/MgF2 subwavelength multilayer (EF)20 is almost identical with that of the homogeneous layer. Therefore, the EMA is approximately accurate.

 figure: Fig. 9.

Fig. 9. Transmittance spectra of the Si/MgF2 subwavelength multilayer (EF)20 and the homogeneous layer with the effective relative permittivity tensor calculated by the EMA under (a) TM and (b) TE polarizations at $\theta = 45^\circ $.

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Appendix B: polarization-dependent property of Fabry-Perot resonance in conventional 1-D PhC containing isotropic dielectric defect

In this appendix, we discuss the polarization-dependent property of the 2nd Fabry-Perot resonances in a conventional 1-D PhC containing an isotropic dielectric (AB)4C(AB)4 for comparison. For the 1-D PhC (AB)N, isotropic dielectrics A and B are chosen to be Si and MgF2, respectively. The thicknesses of A and B layers are selected to be ${d_\textrm{A}} = {d_\textrm{B}} = 134\; \textrm{nm}$. The Bragg wavelength of the 1st order PBG at normal incidence can be calculated as ${\lambda _{\textrm{Brg}}} = 2({{n_\textrm{A}}{d_\textrm{A}} + {n_\textrm{B}}{d_\textrm{B}}} )= 1299.80\; \textrm{nm}$. For the isotropic dielectric defect layer C, the thickness is selected to be ${d_\textrm{C}} = 550\; \textrm{nm}$. We numerically calculate the transmittance spectrum of the 1-D PhC containing an isotropic dielectric defect (AB)4C(AB)4 as a function of the incident angle under TM and TE polarizations according to the TMM [73], as shown in Fig. 10(a). As demonstrated, two Fabry-Perot resonances (1st and 2nd Fabry-Perot resonances) occur inside the PBG. As the incident angle increases from $0^\circ $ to $60^\circ $, the 2nd Fabry-Perot resonance under TM polarization shifts from 1474.71 to 1366.65 nm while that under TE polarization shifts from 1474.71 to 1417.75 nm. Figure 10(b) further gives the dependence of the numerically calculated wavelength difference of the 2nd Fabry-Perot resonance between TM and TE polarizations on the incident angle. As the incident angle increases from $0^\circ $ to $60^\circ $, the numerically calculated wavelength difference increases from 0 to 51.10 nm. Comparing Figs. 4(b) and 10(b), the maximum wavelength difference of the 2nd Fabry-Perot resonance in the designed 1-D PhC containing an all-dielectric defect reaches 3.11 times of that in the conventional 1-D PhC containing an isotropic dielectric.

 figure: Fig. 10.

Fig. 10. (a) Numerically calculated transmittance spectrum of the 1-D PhC containing an isotropic dielectric defect layer (AB)4C(AB)4 as a function of the incident angle under TM and TE polarizations. (b) Numerically calculated wavelength difference of the 2nd Fabry-Perot resonance between TM and TE polarizations on the incident angle.

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Appendix C: high-performance polarization selectivity when exchanging the positions of Si and MgF2 layers within the all-dielectric EMM defect

In this appendix, we demonstrate that high-performance polarization selectivity can still be achieved if exchanging the positions of Si and MgF2 layers (E and F layers) within the all-dielectric EMM defect. After exchanging the positions of Si and MgF2 layers, the 1-D PhC containing an all-dielectric EMM defect can be denoted by (AB)4(FE)20(AB)4. Figure 11(a) gives the transmittance spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(FE)20(AB)4 under TM and TE polarizations at $\theta = 45^\circ $ according to the TMM [83]. Under TM polarization, a transmittance peak occurs at the wavelength 1513.87 nm owing to the 2nd Fabry-Perot resonance. For TE polarization, a transmittance peak occurs at the wavelength 1612.18 nm owing to the 2nd Fabry-Perot resonance. The wavelength difference between two transmittance peaks reaches 98.31 nm, giving rise to high-performance polarization selectivity. In addition, the Q factors of the 2nd Fabry-Perot resonances under TM and TE polarizations are 1.45 × 102 and 5.82 × 102, respectively. Figure 11(b) gives the PER spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(FE)20(AB)4 at $\theta = 45^\circ $. Enabled by the polarization-sensitive property of the 2nd Fabry-Perot resonance, high-performance polarization selectivity is achieved. At the wavelength 1513.47 nm, the PER reaches its maximum 2.05 × 104. Hence, high-performance polarization selectivity can still be achieved after exchanging the positions of Si and MgF2 layers within the all-dielectric EMM defect. The underlying reason is that the EMA do not dependent on the positions of the components in metamaterials [79,80].

 figure: Fig. 11.

Fig. 11. (a) Numerically calculated transmittance spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(FE)20(AB)4 under TM and TE polarizations at $\theta = 45^\circ $. (b) PER spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(FE)20(AB)4 at $\theta = 45^\circ $.

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Funding

Basic and Applied Basic Research Foundation of Guangdong Province (2021A1514010050, 2022A1515010726, 2023A1515011024); National Natural Science Foundation of China (12104105, 12264028, 12304420, 12364045); Science and Technology Program of Guangzhou (202201011176); Natural Science Foundation of Jiangxi Province (20232BAB201040, 20232BAB211025); Start-up Funding of Guangdong Polytechnic Normal University (2021SDKYA033); Interdisciplinary Innovation Fund of Nanchang University (2019-9166-27060003).

Disclosures

The authors declare that there are no conflicts of interest related to this article.

Data availability

Data underlying the results presented in this paper are available from the corresponding authors upon reasonable request.

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Data underlying the results presented in this paper are available from the corresponding authors upon reasonable request.

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Figures (11)

Fig. 1.
Fig. 1. (a) Schematic of a 1-D PhC containing an isotropic dielectric defect (C layer). (b) Schematics of the IFCs of isotropic dielectric C under TM and TE polarizations. (c) Schematic of a 1-D PhC containing an all-dielectric EMM defect (D layer). The EMM defect layer is realized by an all-dielectric subwavelength multilayer (EF)S. (d) Schematics of the IFCs of EMM D under TM and TE polarizations.
Fig. 2.
Fig. 2. Dependence of the scale factor F on the duty cycle p.
Fig. 3.
Fig. 3. (a) Dependence of the theoretically predicted wavelength of the 2nd Fabry-Perot resonance on the incident angle under TM and TE polarizations. (b) Dependence of the theoretically predicted wavelength difference of the 2nd Fabry-Perot resonance between TM and TE polarizations on the incident angle.
Fig. 4.
Fig. 4. (a) Numerically calculated transmittance spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 as a function of the incident angle under TM and TE polarizations. (b) Numerically calculated wavelength difference of the 2nd Fabry-Perot resonance between TM and TE polarizations on the incident angle. (c) Dependence of the numerically calculated Q factor of the 2nd Fabry-Perot resonance on the incident angle under TM and TE polarizations.
Fig. 5.
Fig. 5. (a) Dependence of the theoretically predicted and numerically calculated wavelengths of the 2nd Fabry-Perot resonance on the incident angle under TM and TE polarizations. (b) Dependence of the theoretically predicted and numerically calculated wavelength differences of the 2nd Fabry-Perot resonance between TM and TE polarizations on the incident angle.
Fig. 6.
Fig. 6. (a) Numerically calculated transmittance spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 under TM and TE polarizations at $\theta = 45^\circ $. (b) PER spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 at $\theta = 45^\circ $.
Fig. 7.
Fig. 7. (a) Numerically calculated transmittance spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 under TM and TE polarizations at $\theta = 60^\circ $. (b) PER spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 at $\theta = 60^\circ $.
Fig. 8.
Fig. 8. Optimized PER of the 1-D PhC containing an all-dielectric EMM defect (AB)4(EF)20(AB)4 at different incident angles. The black dashed line represents PER = 103.
Fig. 9.
Fig. 9. Transmittance spectra of the Si/MgF2 subwavelength multilayer (EF)20 and the homogeneous layer with the effective relative permittivity tensor calculated by the EMA under (a) TM and (b) TE polarizations at $\theta = 45^\circ $.
Fig. 10.
Fig. 10. (a) Numerically calculated transmittance spectrum of the 1-D PhC containing an isotropic dielectric defect layer (AB)4C(AB)4 as a function of the incident angle under TM and TE polarizations. (b) Numerically calculated wavelength difference of the 2nd Fabry-Perot resonance between TM and TE polarizations on the incident angle.
Fig. 11.
Fig. 11. (a) Numerically calculated transmittance spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(FE)20(AB)4 under TM and TE polarizations at $\theta = 45^\circ $. (b) PER spectrum of the 1-D PhC containing an all-dielectric EMM defect (AB)4(FE)20(AB)4 at $\theta = 45^\circ $.

Equations (14)

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φ PhC 1 + 2 φ C + φ PhC 2 = 2 m π ( m = 0 , 1 , 2 ) ,
( k x ) 2 ε C + [ k C z TM ( TE ) ] 2 ε C = ( k 0 ) 2 ,
φ C TM ( TE ) = k C z TM ( TE ) d C = 2 π λ d C ε C si n 2 θ ,
φ PhC 1 + 2 φ D + φ PhC 2 = 2 m π ( m = 0 , 1 , 2 ) ,
ε D ¯ ¯ = [ ε D x 0 0 0 ε D x 0 0 0 ε D z ] ,
ε D x = p ε E + ( 1 p ) ε F ,
1 ε D z = p ε E + 1 p ε F .
( k x ) 2 ε D z + ( k D z TM ) 2 ε D x = ( k 0 ) 2 ,
( k x ) 2 ε D + ( k D z TE ) 2 ε D = ( k 0 ) 2 ,
φ D TM = k D z TM d D = 2 π λ d D ε D x ε D x ε D z si n 2 θ ,
φ D TE = k D z TE d D = 2 π λ d D ε D x si n 2 θ ,
Δ φ D = | φ D TM φ D TE | = 2 π λ d D | ε D x ε D x ε D z si n 2 θ ε D x si n 2 θ | .
F ( p , θ ) = | [ p ε E + ( 1 p ) ε F ] [ 1 ( p ε E + 1 p ε F ) si n 2 θ ] p ε E + ( 1 p ) ε F si n 2 θ | .
Δ φ D ( p , θ ) = 2 π λ d D F ( p , θ ) .
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