Study of photoluminescence properties of Nd-O+-codoped Si-based thin film

YUAN Meiling; LI Chenfa; LENG Xinli

doi:10.1364/ACP.2009.WL37

Asia Communications and Photonics Conference and Exhibition
Technical Digest (CD) (Optica Publishing Group, 2009),
paper WL37
•https://doi.org/10.1364/ACP.2009.WL37

Study of photoluminescence properties of Nd-O⁺-codoped Si-based thin film

YUAN Meiling, LI Chenfa, and LENG Xinli

Asia Communications and Photonics Conference and Exhibition 2009

Shanghai China
2–6 November 2009
ISBN: 978-1-55752-877-3

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Y. Meiling, L. Chenfa, and L. Xinli, "Study of photoluminescence properties of Nd-O+-codoped Si-based thin film," in Asia Communications and Photonics Conference and Exhibition, Technical Digest (CD) (Optica Publishing Group, 2009), paper WL37.

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Abstract

The photoluminescence(PL) spectra at room temperature for the Si-based samples doped by Nd-O⁺ are measured. All the samples possess blue-violet PL properties and light emission is stable. The PL spectra has multiple peak structure. The intensity of PL spectra is relative to Nd and O⁺ implantation and the annealing temperature. The light emission is more greater for the sample of first O⁺ then Nd ion-implanted silicon than the one of first Nd then O⁺ ion-implanted silicon.

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