Low-temperature Si/Si Wafer Bonding Using Boride Treated Surface

Hailan Song; Hui Huang; Xiaomin Ren; Wenjuan Wang; Yongqing Huang

doi:10.1364/ACP.2009.WL40

Asia Communications and Photonics Conference and Exhibition
Technical Digest (CD) (Optica Publishing Group, 2009),
paper WL40
•https://doi.org/10.1364/ACP.2009.WL40

Low-temperature Si/Si Wafer Bonding Using Boride Treated Surface

Hailan Song, Hui Huang, Xiaomin Ren, Wenjuan Wang, and Yongqing Huang

Asia Communications and Photonics Conference and Exhibition 2009

Shanghai China
2–6 November 2009
ISBN: 978-1-55752-877-3

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H. Song, H. Huang, X. Ren, W. Wang, and Y. Huang, "Low-temperature Si/Si Wafer Bonding Using Boride Treated Surface," in Asia Communications and Photonics Conference and Exhibition, Technical Digest (CD) (Optica Publishing Group, 2009), paper WL40.

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Abstract

An approach for Si/Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the Si fracture energy by annealing at 180°C. The properties of the bonded structures were studied in terms of the interface shape, electrical and optical characteristic through SEM, and interface I-V curve.

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