High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

Chao Zhao; Tien Khee Ng; Nini Wei; Bilal Janjua; Rami T. ElAfandy; Aditya Prabaswara; Chao Shen; Giuseppe Bernardo Consiglio; Abdulrahman Albadri; Ahmed Y. Alyamani; Munir M. El-Desouki; Boon S. Ooi

doi:10.1364/ACPC.2016.AS1F.6

Asia Communications and Photonics Conference 2016
OSA Technical Digest (online) (Optica Publishing Group, 2016),
paper AS1F.6
•https://doi.org/10.1364/ACPC.2016.AS1F.6

High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

Chao Zhao, Tien Khee Ng, Nini Wei, Bilal Janjua, Rami T. ElAfandy, Aditya Prabaswara, Chao Shen, Giuseppe Bernardo Consiglio, Abdulrahman Albadri, Ahmed Y. Alyamani, Munir M. El-Desouki, and Boon S. Ooi

Asia Communications and Photonics Conference 2016

Wuhan China
2–5 November 2016
ISBN: 978-0-9600380-0-8

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Optical Sources and Applications (AS1F)

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C. Zhao, T. K. Ng, N. Wei, B. Janjua, R. T. ElAfandy, A. Prabaswara, C. Shen, G. B. Consiglio, A. Albadri, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics," in Asia Communications and Photonics Conference 2016, OSA Technical Digest (online) (Optica Publishing Group, 2016), paper AS1F.6.

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Abstract

The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.

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