Impact of the n+-GaN/AlGaN/p+-GaN Tunnel Junction for III-nitride UV Light-emitting Diodes

Luping Li; Yonghui Zhang; Zi-Hui Zhang

doi:10.1364/ACPC.2017.Su1G.1

Asia Communications and Photonics Conference
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper Su1G.1
•https://doi.org/10.1364/ACPC.2017.Su1G.1

Impact of the n⁺-GaN/AlGaN/p⁺-GaN Tunnel Junction for III-nitride UV Light-emitting Diodes

Luping Li, Yonghui Zhang, and Zi-Hui Zhang

Asia Communications and Photonics Conference 2017

Guangzhou, Guangdong China
10–13 November 2017
ISBN: 978-1-943580-34-7

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Technology and Application of LED (Su1G)

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L. Li, Y. Zhang, and Z. Zhang, "Impact of the n+-GaN/AlGaN/p+-GaN Tunnel Junction for III-nitride UV Light-emitting Diodes," in Asia Communications and Photonics Conference, OSA Technical Digest (online) (Optica Publishing Group, 2017), paper Su1G.1.

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Abstract

This work conducts comprehensive analysis and presents in-depth understanding regarding the n⁺-GaN/AlGaN/p⁺-GaN tunnel junction so that the hole injection, the current spreading effect and the internal quantum efficiency can be improved for III-nitride UV LEDs.

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