Monolithic Silicon-based Active Photonic Integration with Specially Designed III/V Laser and Si3N4 Interlayer Optical Coupler

Yisu Yang; Hao Zhao; Xiaomin Ren

doi:10.1364/ACPC.2020.M4A.30

Asia Communications and Photonics Conference/International Conference on Information Photonics and Optical Communications 2020 (ACP/IPOC)
OSA Technical Digest (Optica Publishing Group, 2020),
paper M4A.30
•https://doi.org/10.1364/ACPC.2020.M4A.30

Monolithic Silicon-based Active Photonic Integration with Specially Designed III/V Laser and Si₃N₄ Interlayer Optical Coupler

Yisu Yang, Hao Zhao, and Xiaomin Ren

Asia Communications and Photonics Conference 2020

Beijing China
24–27 October 2020
ISBN: 978-1-943580-82-8

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Y. Yang, H. Zhao, and X. Ren, "Monolithic Silicon-based Active Photonic Integration with Specially Designed III/V Laser and Si3N4 Interlayer Optical Coupler," in Asia Communications and Photonics Conference/International Conference on Information Photonics and Optical Communications 2020 (ACP/IPOC), K. Xu, D. Simeonidou, C. Chang-Hasnain, N. Wada, X. Ren, Z. Zhukov, P. Perry Shum, Y. Ji, J. Zhang, X. Zhou, C. Lu, and L. Wosinska, eds., OSA Technical Digest (Optica Publishing Group, 2020), paper M4A.30.

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Abstract

Monolithic integration of III/V laser on silicon photonics platform using a Si₃N₄ interlayer optical coupler is proposed. The simulation indicates that the lasing mode is coupled to the Si₃N₄ waveguide underneath efficiently with small footprint.

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