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Conferences > AIOM > 2012 > ITh5B > ITh5B.5

All-epitaxial growth of orientation-patterned gallium phosphide (OPGaP)

Peter G. Schunemann, Lee Mohnkern, Alice Vera, Xiaoping S. Yang, Angie C. Lin, James S. Harris, Vladimir Tassev, and Michael Snure

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Abstract

Significant advances have been made in the quality of orientation-patterned gallium phosphide quasi-phasematched structures grown by MBE through the use of improved phosphorus and silicon cells, and preliminary bulk HVPE growth results are promising.

© 2012 Optical Society of America

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