Abstract
Increased absorption and efficient room temperature luminescence through direct band-to-band recombination have been demonstrated in freestanding germanium nanocrystals synthesized by a simple, cost-effective mechanical grinding process. Structural properties investigated using selected area electron diffraction, micro-Raman measurements and optical-absorption spectroscopy measurements suggest high tensile-strains in the nanocrystals which result in greatly enhanced optical properties confirmed through photoluminescence spectroscopy, excitation-power evolution and time-resolved photoluminescence measurements. These band-engineered germanium nanocrystals are highly promising for monolithic integration with silicon for applications in photovoltaics and other optoelectronic devices due to their compatibility with the existing CMOS technology, simple and cost-effective fabrication and excellent optical properties.
© 2012 Optical Society of America
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