The VO2 thin film of highly optical switching rate for laser protection in infrared detector

Xiongyuanyue Xiao; Da Su; Qing Cheng; Jianjun Lai; Ying Huang

doi:10.1364/ASA.2017.AS3A.6

The International Photonics and Optoelectronics Meeting 2017
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper AS3A.6
•https://doi.org/10.1364/ASA.2017.AS3A.6

The VO₂ thin film of highly optical switching rate for laser protection in infrared detector

Xiongyuanyue Xiao, Da Su, Qing Cheng, Jianjun Lai, and Ying Huang

Advanced Spectroscopy and Applications 2017

Wuhan China
3–5 November 2017
ISBN: 978-1-943580-37-8

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X. Xiao, D. Su, Q. Cheng, J. Lai, and Y. Huang, "The VO2 thin film of highly optical switching rate for laser protection in infrared detector," in The International Photonics and Optoelectronics Meeting 2017, OSA Technical Digest (online) (Optica Publishing Group, 2017), paper AS3A.6.

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Abstract

Reactive ion beam sputtering and post-annealing process employed, VO₂ thin film was prepared on the sapphire as the substrate, whose dynamic variation of the resistance can reach up to nearly 4 orders of magnitude. Infrared laser of the wavelength of 3.6μm was used to carry out the experiment of laser protection. The result indicates the VO₂ thin film achieves the highly infrared switching rate, about 93.4%, demonstrating that the fabricated VO₂ thin film has a great effect on laser protection.

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