Abstract
Polysilicon films were deposited on dielectric layers of SiO2, Si3N4 and a dual layer Si3N4/SiO2 on silicon substrates. The polysilicon films were doped by either implanting with As or P or diffusion doped with phosphorous. The films were then laser annealed using a scanned cw argon laser. The resistivity of the polysilicon films decreases sharply at a threshold energy density that causes complete melting of the polysilicon. These characteristics are described in a comparison paper.1 With a fixed laser power the polysilicon melt width is a function of the scan velocity.
© 1981 Optical Society of America
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