Open Access
Add to BibSonomyAbstract
We have demonstrated rapid (50-Å/sec) photochemical deposition of oxides and nitrides of silicon from gas-phase donor molecules. Both a pulsed ArF laser (193 nm) and a cw Ar II laser (360 nm) were used. The films were grown on silicon wafers contained in a low-pressure flowing cell with a heated substrate. The incident laser beam angle was varied from parallel to normal with respect to the substrate surface.
© 1982 Optical Society of America
PDF ArticleMore Like This
Laser deposition
K. G. Ibbs
WK7 Conference on Lasers and Electro-Optics (CLEO:S&I) 1982
Low-temperature photooxidation of silicon monoxide to silicon dioxide with far-UV (193-nm) laser radiation
S. E. Blum, K. H. Brown, and R. Srinivasan
FF2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1983
Low-temperature growth of polycrystalline Si and Ge films by photolytic laser-induced CVD
J. F. Osmundsen, D. Lubben, C. C, Abele, J. E. Greene, and J. G. Eden
WE4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1982