Abstract

Modification of near-surface layers of metal and semiconductor samples irradiated by laser pulses was studied for changes in topography, structure, and composition of these layers. Excimer (λ = 0.3-μm, E = 0.1...., 100-J, t_p = 0.03,..., 1μsec), ruby(λ = 0.69-μm, E= 10-J, t_p = 1-msec), Nd:glass (λ = 1.06-μm, E = 10-J, t_p = 1-μsec), and CO₂(λ= 9.4,...,10.6-μm, E = 1...., 100-J, t_p = 0.1,..., 100-μsec) pulsed lasers and also high pulse-repetition-rate excimer (P_av = 0.1-kW) and CO₂ (P_av = 3-kW) lasers were used in our experiments.

© 1983 Optical Society of America