Abstract
A conventional Injection laser consists of two cleaved or etched end mirrors perpendicular to the active layer, so that only 1-D laser arrays can be monolithically fabricated. On the other hand, since the surface emitting (SE) laser1 utilizes two surfaces of the epitaxial layers and the light output is taken vertically from the wafer, it is possible to prepare 2-D laser arrays. To do this with conventional stripe lasers, a special 45° mirror must be prepared2 when we want to achieve an emission vertical to the wafer. Recently, we demonstrated a GaInAsP/InP SE laser with a threshold current of 50 mA at 77 K under a pulsed condition,3 and the highest operating temperature was 188 K.4
© 1985 Optical Society of America
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