Abstract
Recently a GaInAsP/InP surface-emitting (SE) injection laser (λ = 1.3 μm) was demonstrated with a threshold current of 50 mA at 77 K under pulsed condition, which operated up to 140 K.1 It seems easier to use the GaAlAs/GaAs system for room-temperature operation, because it has a large characteristic temperature coefficient of the threshold current To at near room temperature.2 Moreover, the GaAlAs/GaAs material has relatively small absorption loss3 that is preferable for a small-gain SE laser. We report the fabrication and pulsed operation of a GaAlAs/GaAs SE injection laser at 77 K and at room temperature.
© 1984 Optical Society of America
PDF ArticleMore Like This
S. Kinoshita, T. Sakaguchi, T. Odagawa, and K. Iga
THK11 Conference on Lasers and Electro-Optics (CLEO:S&I) 1986
S. KINOSHITA and K. IGA
THF5 Optical Fiber Communication Conference (OFC) 1987
J. J. Yang, M. Sergant, M. Jansen, C. Dang, J. King, and S. S. Ou
ThT7 Conference on Lasers and Electro-Optics (CLEO:S&I) 1986