Abstract
GaAs/AIGaAs multiple-quantum well-structures (MOWS) have been shown to exhibit strongly nonlinear excitonic absorption at room temperature.1 This effect has been used to mode lock passively GaAs diode lasers to produce picosecond pulses.2 Recently, well-resolved excitons have been observed in the room-temperature absorption spectra of 1.5-μm band gap GalnAs/AllnAs MQWS.3 Mode locking of semiconductor lasers at this wavelength would be very attractive as a picosecond pulse source for fiber optical communications. As a first step in this direction, we have made a pump-probe study of absorption saturation of an GalnAs/AllnAs MQWS which is being used as the output mirror of a 1.5-μm diode laser.
© 1986 Optical Society of America
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