Abstract
The technique of low-pressure metal-organic chemical vapor deposition (LP-MOCVD) is well adapted to the growth of the entire composition range of inP-Gaxln1-xAsyP1-y(0 ≤ x ≤ 0.47, 0 ≤ y ≤ 1) with uniform thickness and composition over a large area of substrate.
© 1988 Optical Society of America
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