Abstract
Vertical-cavity surface emitters (VCSEs) are of interest as components for both 2-D externally locked diode-laser arrays as well as sources for optical interconnects. Significant work has been carried out in the last 10 yr,1,2 but high performance (i.e., powers in excess of 100 mW; slope efficiencies of 15%) has been obtained only recently3 by the successful incorporation of conductive semiconductor-stack rear reflectors. The vast majority of the work has concentrated on relatively thick (~3-μm) active layer devices, most probably because high scattering loss and low reflectivity of conventional rear reflectors1,2 force the lasers to attain minimum threshold-current density only for ~3-μm thick active media. As a consequence threshold-current densities from conventional devices1,2 are relatively high: 30-40 kA/cm2. We present here devices that achieve threshold-current densities as low as 10 kA/cm2, in good agreement with a theoretical model taking into account nonlinear gain.4
© 1989 Optical Society of America
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