Abstract
The laser controlled etching of compound semiconductors in solutions was utilized to fabricate integrated optic devices. A brief description of the physics of laser controlled etching is given to facilitate understanding of realizable structures. In particular, etching through a multilayered sample with material discontinuities, namely, different carrier type or bandgap, has revealed interesting physics of the underlaying dissolution mechanism that was not apparent with bulk samples. The sensitivity of laser controlled etching to the optical and electrical properties of semiconductors was utilized during the etching of GaAs/AIGaAs multilayers to produce novel microstructure.
© 1989 Optical Society of America
PDF ArticleMore Like This
Alan E. Willner and Dragan V. Podlesnik
MDD1 Integrated and Guided Wave Optics (IGWO) 1989
MARK N. RUBERTO, XIAOGE ZHANG, ROBERT SCARMOZZINO, DRAGAN V. PODLESNIK, and RICHARD M. OSGOOD
CWH1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1990
A. Donko, Y. Jung, Y. Wang, J. Hayes, S. U. Alam, G. Brambilla, D. J. Richardson, and M. Beresna
FW6A.3 Frontiers in Optics (FiO) 2017