Abstract
Modulation-doped quantum wells (MD QWs) are fabricated by Introducing doping impurities in the barrier layers during the growth, hence separating them from the mobile carriers that migrate to the low gap QW layers. Because they contain a high density and high mobility electron (or hole) gas MD QWs have been extensively investigated and applied in electronic transport. The optical properties of MD QWs are. however, interesting in their own right for both fundamental reasons and optoelectronics applications.
© 1989 Optical Society of America
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