Abstract
Previous demonstrations of injection-locking of high power diode laser arrays broad area devices have all required the use of an external master oscillator. We report the first integrated injection- locked high power cw diode laser array with an on- chip independently controlled master oscillator. With this integrated device, we show a near diffraction limited, single lobed, far field emission pattern at single facet power levels up to 125 mW cw (250mW total output) and angular steering of the far field pattern over a range of 0.50°.
© 1989 Optical Society of America
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