Abstract
We have measured the dc photoconductivity in four photorefractive samples of Bi12SiO20 at the same optical wavelength of 515 nm at which extended photorefractive grating erasure and two-beam coupling experiments have been performed in the same crystals.1 All the samples exhibited over unity quantum efficiency and excellent photorefractive response. The internal electric field E driving the photocurrent was found not to be closely related to the voltage applied to the sample divided by the electrode spacing w. We determined both the uniformity and value of E by the electrooptic effect which it produced on a 0.4-mm diam 633-nm beam whose propagation path through the sample was extensively varied in a series of measurements. By using techniques2 which we describe to compensate residual birefringence in various optical elements, we were able to measure electric fields as low as 2 V/cm (averaged over the 633-nm beam path) and establish that E was uniform to better than ± 1 % across the sample.
© 1989 Optical Society of America
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