Abstract
Micropatterning of dielectric or ceramic substrates is important in many areas of the electronics industry. Laser photoablation techniques have been used previously for many of these applications, typically using nanosecond or longer laser pulses with wavelengths that are strongly absorbed by the substrate. We report here the photoablation of sapphire using 30-ps laser pulses at 266 nm, a wavelength that is not strongly absorbed by bulk sapphire. Efficient laser ablation is observed together with a noticeable dependence on the crystal orientation.
© 1990 Optical Society of America
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