Abstract
The dynamics of carriers in semiconductors is most interesting at frequencies comparable to either the plasma frequency or the carrier damping rate. Unfortunately, this usually occurs in the submillimeter region, which is difficult to reach with microwave as well as with far IR techniques. With microwave techniques the low frequency behavior of semiconductors has been studied up to 0.1 THz on a single frequency basis. With classical far IR spectroscopy the high frequency (above 2-THz) behavior of semiconductors has been thoroughly Investigated. However, the investigation of the most important frequency range from 0.1 to 2 THz has remained incomplete.
© 1990 Optical Society of America
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