Abstract
Although there have been numerous reports of waveguide electroabsorption modulators in GaAs/AlGaAs1–5 based on the quantum confined stark effect (QCSE), very little work has been done2–5 on laser compatible structures. Clearly, the development of laser/modulator compatible structures is an important requirement for optoelectronic integrated circuits. In this paper we report a ridge waveguide SQW electroabsorption modulator that not only has the largest on/off ratio reported so far for a device operating in the 0.8 μm wavelength region (300:1, with an operating voltage of < 4 V and cavity length of 250 μm), but also performs adequately as a laser, exhibiting a threshold current of less than 25 mA. In addition, we have fabricated a device from the same material that shows a 3 dB cutoff frequency of more than 2 GHz.
© 1991 Optical Society of America
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