Abstract
Conventional gallium indium arsenide (GaInAs) photodiodes (PDs) are fabricated with an indium phosphide (InP) cap layer and a latticematched GaInAs absorbing layer. Shorter wavelengths are strongly absorbed by this cap layer, resulting in a lower quantum efficiency of a PD with a thicker cap layer.1-3 The temperaturedependent GaInAs absorption-edge wavelength is also the limitation of the responsivity for the longer wavelength region and is attributed to the large temperature dependence of the responsivity at 1.55 μm.
© 1991 Optical Society of America
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