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Conferences > CLEO > 1991 > CTuJ > CTuJ6
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CTuJ6

Optical nonlinearities in type-II and type-I semiconductor quantum wells

R. Binder, S. W. Koch, I. Galbraith, W. S. Fu, A. Owyoung, G. R. Olbright, R. Pon, G. Khitrova, and H. M. Gibbs

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Abstract

We present a many-body analysis of optical nonlinearities in type-I and type-II quantum wells and compare the results to nanosecond and femtosecond measurements on GaAs/AlxGa1−x.As samples. In our theory we numerically solve the equations for the interband polarization for light-hole (LH) and heavy-hole (HH) transitions, including the relevant exchange and dynamic screening effects.1-3 For the type-II structures we assume perfect electron-hole charge separation, so only the Γ-point holes contribute to phase-space filling of the GaAs exciton states. Inhomogeneous broadening resulting from well-width fluctuations is included by averaging the spectra over a distribution of well thicknesses assuming approximate half-monolayer-thickness fluctuations.

© 1991 Optical Society of America

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