Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 1993 > CME > CME5
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CME5

Wavelength dependence of T0 in InGaAsP semiconductor laser diodes

J. O’Gorman and A. F. J. Levi

Not Accessible

Your library or personal account may give you access

Abstract

The modulation capabilities1 and high temperature performance2 of distributed feedback laser diodes may be enhanced by DFB gratings appropriately detuned from the material gain peak. Since InGaAs and InGaAsP materials are expected to exhibit a sublinear dependence of gain on carrier density at high carrier densities, the influence of wavelength-selective feedback (and hence lasing wavelength, λ) on the temperature sensitivity of laser diode threshold current is of importance.

© 1993 Optical Society of America

PDF Article
More Like This
Temperature dependence of lasing wavelength in a 1.3-μm GaInNAs laser diode with high T0

Masahiko Kondow, Kouji Nakahara, Takeshi Kitatani, Michael C. Larson, and Kazuhisa Uomi
CWL5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

Low-threshold buried-heterostructure 0.98-μm strained-quantum-well InGaAsP/InGaAsP/InGaP lasers

E. C. Vail, S. F. Lim, Y.-A. Wu, D. A. Francis, C. J. Chang-Hasnain, R. Bhat, C. Caneau, and H. Leblanc
WH16 Optical Fiber Communication Conference (OFC) 1993

High power, high efficiency 2.0-µm laser diodes

J. S. Major, D. W. Nam, J. S. Osinski, and D. E Welch
CThE3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use