Abstract
A photoluminescenee (PL) imaging technique has been used to investigate the spatial distribution of photo-injected carriers in metal-semiconductor-metal (MSM) photodetectors. We examined a GaAs MSM having an interdigitated finger geometry of 20 micron wide gold electrodes and 20 micron spaces. The 100 × 100 micron area of the detector was illuminated by 100 mW of 514.5 nm light from an Ar ion laser that excited PL from the GaAs between the fingers of the electrodes. A microscope focused the ~860 nm GaAs band edge PL into a CCD camera that provided a video image (500×total magnification) of the distribution of PL intensity from the MSM. An optical transmission filter excluded the laser light from the video camera.
© 1993 Optical Society of America
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