Abstract
The merit of Yb3+-doped fluorapatite (Ca5(PO4)3F or Yb:FAP)1 lies in the potential for direct laser diode pumping owing to its high efficiency, low threshold power and its absorption band at 904-nm which is readily available from InGaAs laser diodes. In this paper we report the observation of lasing of Yb:FAP at the 981-nm line, which is believed to be lasing to the ground state level. Furthermore by careful choice of optics, the crystal was made to lase on the 981 and the 1042-nm lines either singly or simultaneously. The 981-nm laser emission was polarized perpendicular to the c-axis of the crystal whilst the 1042-nm emission was polarized parallel to the c-axis.
© 1993 Optical Society of America
PDF ArticleMore Like This
S. A. Payne, W. F. Krupke, L. D. DeLoach, L. K. Smith, W. L. Kway, and J. B. Tassano
MJJ6 OSA Annual Meeting (FIO) 1992
Stephen A. Payne, William F. Krupke, Larry K. Smith, Laura D. DeLoach, and Wayne L. Kway
DL14 Advanced Solid State Lasers (ASSL) 1992
L. D. DeLoach, S. A. Payne, W. F. Krupke, L. K. Smith, W. L. Kway, J. B. Tassano, and B. H. T. Chai
LM3 Advanced Solid State Lasers (ASSL) 1993