Abstract
Recently, the use of large active area semiconductor amplifiers1–5 has been demonstrated to be an attractive approach for achieving high power emission in a semiconductor device while maintaining diffraction limited output beam characteristics. Using single pass, broad-area (rectangular-shaped active region) traveling wave amplifiers, record near-diffraction limited output powers have been demonstrated, with 21 W generated1 under pulsed conditions and 3.3 in cw operatiori.5 Using amplifiers with a truncated taper electrode configuration, a near-diffraction limited-cw output of 4.5 W was achieved. The operating characteristics of several amplifier designs, including broad-area double pass and single pass and tapered electrode3,4 single pass structures, will be presented.
© 1993 Optical Society of America
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