Abstract
Design of high-power phase-locked arrays operating in a single fundamental mode is an important issue in semiconductor laser research. 1 he most difficult part of this problem is the stability of the fundamental mode above threshold when it is necessary to take into consideration effects of gain spatial hole burning (SHB). It is well known that positive real-index-guided evanescently-coupled diode laser arrays suffer severely from lateral-mode Instability because of SHB.1 The spatial hole burning results in self-focusing of the fundamental array mode and, consequently, higher order lateral modes reach threshold. As a result, such arrays start to operate multimode at around 50 mW.
© 1993 Optical Society of America
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