Abstract
Advances in InGaAsP growth techniques promise monolithic integration of many photonic components on a single substrate. The control of various bandgap energies of epitaxial materials in different parts of the substrate is very important. Previously, monolithic semiconductor ring lasers have been fabricated on both the GaAs and InP material systems.1-3 Etched ridge waveguide, native oxide buried heterostructure, and regrown buried rib waveguide were utilized to implement the curved waveguides. Recently, excellent results have been reported in minimizing the transition loss between waveguides with different core bandgap energies by using the selective area epitaxy of multiple quantum wells (MQWs).4,5
© 1993 Optical Society of America
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