Abstract
The bandwidth and density limitations of electrical interconnects within a computer may be alleviated by using light beams to communicate information between chips. Because of its ability to provide high power with high spectral and spatial quality, the Nd:YAG laser has been considered as a possible light source for these systems. We have shown that the InGaAs/GaAsP material system may be used to grow undetected MQWs on GaAs for modulators at 1.064 μm.1,2 This is because the addition of phosphorous to the barrier results in negative strain in the barrier balancing the positive strain in the InGaAs well, allowing in principle any number a periods to be grown without having any net strain build up.
© 1994 Optical Society of America
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