Abstract
Previous attempts at wavelength switching in semiconductor laser diodes have been performed on single quantum well devices, where the switching has occurred between wavelengths associated with the n = 1 and n = 2 subbands within the single well with a corresponding change in current. We have investigated the use of asymmetric double quantum well structures to achieve switching at a fixed current. The positioning of these wells is such that for a particular Fermi level separation the modal threshold gain for each of the wells is the same, and designed to be equal to a value typical for the losses of an AIGaAs laser diode—about 40 cm−1, The material grown to produce these devices contained a central 40 A well with an 80 A well displaced 400 A from the center of the active region to reduce its confinement factor. Control SQW samples were also grown with the wells in their respective positions.
© 1994 Optical Society of America
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