Abstract

The control of both photon modes and electron modes in confined structures is important for the ultimate light sources.^1,2 Recently, a GaAs quantum wire of a lateral width less than 10 nm was successfully fabricated using metal organic chemical vapor deposition (MOCVD) selective group, with a clear blue shift of the photoluminescence (PL) peak.³ In addition, in microcavity structures in which the photons are confined, substantial reduction of the threshold current is predicted owing to the controlled spontaneous emission mode.⁴ In this paper, as the first step towards the ultimate semiconductor lasers, we report the fabrication of a strained InGaAs quantum wire laser with a vertical 4 λ-microcavity using MOCVD selective growth technique.

© 1994 Optical Society of America