Abstract

MSM photodetectors are attractive for applications in optical communication and interconnection because of their simple fabrication and low capacitance. Low responsivity (0.2 to 0.4 A/W), however, which is primarily due to finger electrode shadowing, is also one of their characteristics. To design MSMs suitable for low incident power and high bit rates, we report herein a thin-film inverted (fingers on the bottom) MSM photodetector (I-MSM) that has been separated from the growth substrate and bonded to a host substrate. We compare its characteristics to those of conventional thin-film MSMs (C-MSMs) and MSMs with indium-tin-oxide transparent electrodes (ITO-MSMs) reported in the literature.¹

© 1995 Optical Society of America