Abstract

The use of lattice-matched and strained InGaAsP multiple quantum wells (MQWs) to the design of 1.3-μm lasers has resulted in devices with a greatly reduced threshold current and enhanced slope efficiencies, compared with similar bulk laser structures. These improvements in the laser output have. been mainly associated with a reduction in the hole effective mass, intervalence band absorption losses, and Auger recombination, which occurs as a consequence of the valence band modifications with strain.¹ The valence band changes with strain, however, have not impacted significantly the temperature sensitivity of the 1.3-μm MQW devices, which still remains high, mainly because this effect is influenced by carrier overflow into the barrier and separate confinement layers.²

© 1996 Optical Society of America