Single-mode gain-switched operation of a self-seeded 690-nm InGaP/AlGaInP Fabry-Perot laser

Y. Uchiyama; M. Tsuchiya; H. F. Liu; H. F. Liu; T. Kamiya

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1996),
paper CTuL12

Single-mode gain-switched operation of a self-seeded 690-nm InGaP/AlGaInP Fabry-Perot laser

Y. Uchiyama, M. Tsuchiya, H. F. Liu, and T. Kamiya

Conference on Lasers and Electro-Optics 1996

Anaheim, California United States
2–7 June 1996
ISBN: 1-55752-443-2

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Y. Uchiyama, M. Tsuchiya, H. F. Liu, and T. Kamiya, "Single-mode gain-switched operation of a self-seeded 690-nm InGaP/AlGaInP Fabry-Perot laser," in Conference on Lasers and Electro-Optics, J. Bowers, D. Miller, D. Scifres, and A. Weiner, eds., Vol. 9 of OSA Technical Digest (Optica Publishing Group, 1996), paper CTuL12.

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Abstract

The gain-switching scheme of semiconductor lasers provides a means to generate picosecond optical pulses at repetition rates up to 10 GHz. This feature is attractive for its applications not only to ultrashort pulse generation in 1.5-μm regime but also to compact and reliable coherent optical sources for the shorter wavelength nonlinear optics.¹

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