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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CTuL23

High-speed metal-semiconductor-metal photodetector formed by silicon trenches

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Abstract

Silicon metal-semiconductor-metal photodetectors (MSM-PDs) are attractive for use in the 0.8-μm wavelength band in optical communication systems due to their much lower cost for very large-scale integration with silicon circuitry. However, the intrinsic disadvantage of silicon is its long absorption depth ( ~ 12 μm) at 830 nm, which is the operation wavelength of gallium arsenide lasers, causing a tradeoff between responsivity and bandwidth.

© 1996 Optical Society of America

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