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Conferences > CLEO > 2000 > CTuA > CTuA37
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CTuA37

Mid-infrared (3.3-3.9 µm) lasers and light-emitting diodes with type-ll “W" lnAs(P,Sb)/lnAsSb active regions

A. Stein, A. Behres, J. Kluth, K. Heime, P. Christol, E. M. Skourí, A. Wilk, and A. Loullié

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Abstract

Mid-infrared (λ= 3-5 µm) lasers with InAsSb-containing double heterostructure or multiquantum well (MQW) active regions show high output power and low threshold current densities but are limited to temperatures lower than 220 K due to leakage current and Auger recombination.

© 2000 Optical Society of America

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