Abstract
We report a CW 350K operation of a Diode-Pumped Sb-based Surface-Emitting-Laser at 2.3μm. The structure is made of a 24.5 pairs AlAsSb/GaSb bragg mirror, 5 type-I InGaAsSb/AlGaAsSb wells. The threshold intensity is <1 kW/cm2.
© 2004 Optical Society of America
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