On Raman Gain in Silicon Waveguides: Limitations from Two-Photon-Absorption generated carriers

T.K. Liang; H. K. Tsang

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2004),
paper CThT48

On Raman Gain in Silicon Waveguides: Limitations from Two-Photon-Absorption generated carriers

T.K. Liang and H. K. Tsang

Conference on Lasers and Electro-Optics 2004

San Francisco, California United States
16–21 May 2004
ISBN: 1-55752-770-9

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CLEO Poster Session III (CThT)

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T. K. Liang and H. K. Tsang, "On Raman Gain in Silicon Waveguides: Limitations from Two-Photon-Absorption generated carriers," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2004), paper CThT48.

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Abstract

We show experimentally that free carriers generated by two-photon-absorption in silicon-on-insulator (SOI) waveguides limit the available pump power for stimulated Raman scattering and lead to net optical loss.

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