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Conferences > CLEO > 2004 > CTuC > CTuC1
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper CTuC1

50-W peak power AlGaAs/InGaAs/GaAs single quantum-well 990-nm diode lasers

R.U. Martinelli, J. Li, V. Khalfin, A.M. Braun, B.I. Willner, M. Harvey, Z. Shellenbarger, and J.H. Abeles

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Abstract

50 W peak-power was demonstrated from 2-mm-long, 100-μm-aperture AlGaAs/InGaAs/GaAs single-quantum-well lasers driven with 40-ns, 80-A current pulses. Grown by organo-metallic vapor-phase epitaxy, the lasers have internal losses of 1.5 cm−1 and internal efficiencies of 0.90.

© 2004 Optical Society of America

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