Abstract
For inspecting electrical failures in large-scale integration circuits (LSI), we developed a laser-THz emission microscope (LTEM), which records the map of the THz emission amplitude in a sample upon excitation with fs laser pulses. We successfully obtained the THz emission image of MOSFETs fabricated in a test element group without bias voltage. We also measured MOSFETs in which the connection lines from the electrodes to the p-n junctions were interrupted, and found that the polarity of the temporal waveform of the THz emission from the p-n junction in damaged MOSFETs has the opposite sign compared to that in normal MOSFETs. This result indicates that the LTEM is a potential tool for the inspection of MOSFFTs without bias voltage, which is the advantage for the failure analysis of semiconductor devices during the manufacturing process.
© 2005 Optical Society of America
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