InGaN-GaNAs Type-II ’W’ Quantum Well Lasers for Emission at 450-nm

Ronald A. Arif; Hongping Zhao; Nelson Tansu

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
OSA Technical Digest (CD) (Optica Publishing Group, 2008),
paper CMI4

InGaN-GaNAs Type-II ’W’ Quantum Well Lasers for Emission at 450-nm

Ronald A. Arif, Hongping Zhao, and Nelson Tansu

Conference on Lasers and Electro-Optics 2008

San Jose, California United States
4–9 May 2008
ISBN: 978-1-55752-859-9

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Gallium Nitride Lasers (CMI)

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R. A. Arif, H. Zhao, and N. Tansu, "InGaN-GaNAs Type-II ’W’ Quantum Well Lasers for Emission at 450-nm," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optica Publishing Group, 2008), paper CMI4.

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Abstract

Type-II InGaN-GaNAs quantum well gain media is analyzed for lasers emitting at 450-nm. Optical gain analysis, using 6-band k.p formalism, show 3-times improvement and 40% reduction in threshold current.

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