Amplified Spontaneous Emission and Optical Gain Coefficient of SiOX Based Planar Waveguide with Buried Silicon Nanocrystals on Silicon Substrate

Cheng-Wei Lian; Gong-Ru Lin

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
OSA Technical Digest (CD) (Optica Publishing Group, 2008),
paper CMK4

Amplified Spontaneous Emission and Optical Gain Coefficient of SiO_X Based Planar Waveguide with Buried Silicon Nanocrystals on Silicon Substrate

Cheng-Wei Lian and Gong-Ru Lin

Conference on Lasers and Electro-Optics 2008

San Jose, California United States
4–9 May 2008
ISBN: 978-1-55752-859-9

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Fiber and Waveguide Devices (CMK)

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C. Lian and G. Lin, "Amplified Spontaneous Emission and Optical Gain Coefficient of SiOX Based Planar Waveguide with Buried Silicon Nanocrystals on Silicon Substrate," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optica Publishing Group, 2008), paper CMK4.

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Abstract

Si-rich SiO_x planar waveguide with Si nanocrystals contributed amplified spontaneous emission at 750-850 nm is characterized by variable stripe length method to demonstrate optical gain and loss coefficients of 60 and 16 cm⁻¹, respectively.

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