Abstract
We report TM polarized 808-nm Lasers bars with 69.5% efficiency at 15°C. Performance is limited by the low-strained InGaAsP quantum well, which has high threshold, low slope and high sensitivity to packaging induced stress.
© 2008 Optical Society of America
PDF ArticleMore Like This
K. Paschke, S. Einfeldt, A. Ginolas, K. Häusler, P. Ressel, B. Sumpf, H. Wenzel, and G. Erbert
CMN4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008
Paul Crump, Mike Grimshaw, Jun Wang, Weimin Dong, Shiguo Zhang, Suhit Das, Jason Farmer, Mark DeVito, Lei S. Meng, and Jason K. Brasseur
JWB24 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006
Yifeng Huang, Martin H. Hu, James Ho, Weimin Wang, Langxing Kuang, Yuzhen Qiu, Xue Bai, and Wenbin Liu
T2G.4 Asia Communications and Photonics Conference (ACP) 2020