Abstract
The mechanism and application to optoelectronics of THz radiation induced by lasers have been studied intensively.1,2 The mechanism of the THz radiation from semiconductor has been explained by the dipole induced by the surface surge current or optical rectification,3 and this phenomena can be applied as an interface between ultrafast optics and electronics. It is also an attractive light source for studying time-resolved far-infrared spectroscopy. For this purpose, the radiation properties should be known in detail. In this presentation, we will describe spatial and spectral properties of THz radiation from bulk GaAs excited by ultrashort-laser pulses and the diffraction effects.
© 1995 IEEE
PDF ArticleMore Like This
N. Sarukura, Z. Liu, Y. Segawa, S. Koshihara, K. Shimoyama, Y. Kondo, Y. Shibata, T. Takahashi, S. Hasebe, and M. Ikezawa
UTUE9 Ultrafast Electronics and Optoelectronics (UEO) 1995
N. Sarukura, Z. Liu, Y. Segawa, S. Koshihara, K. Shimoyama, Y. Kondo, Y. Shibata, T. Takahashi, S. Hasebe, and M. Ikezawa
QThG35 Quantum Electronics and Laser Science Conference (CLEO:FS) 1995
Zhenlin LIU, Hideyuki OHTAKE, Shinji IZUMIDA, Shingo ONO, and Nobuhiko SARUKURA
TS11 Advanced Solid State Lasers (ASSL) 1998