Abstract
The use of semiconductor electro-absorption (EA) light modulators in high-bitrate optical transmitting and switching systems requires such characteristics as low insertion loss, low driving voltage, and wide modulation bandwidth.1,2 However, optimization of structural parameters for the devices has been difficult to satisfy the above requirements simultaneously for their mutual dependencies. In this report, we propose and demonstrate a new structural design to reduce the insertion loss while preserving the other characteristics by controlling the light guiding condition.
© 1995 IEEE
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